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AD9260EB BR1510 INY2313 NCP1092 P2012E FQT5N20 PT25B8 T1608
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  smd type www.kexin.com.cn 1 diodes sod-523 unit: mm 0.77max 0.6 +0.1 -0.1 0.3 +0.05 -0.05 0.8 +0.05 -0.05 1.2 +0.1 -0.1 1.6 +0.1 -0.1 0.1 +0.05 -0.02 0.07max +- silicon epitaxial planar pin diode HVC132 features low capacitance.(c=0.5pf max) low forward resistance. (rf=2.0 max) absolute maximum ratings ta = 25 parameter symbol value unit peak reverse voltage v rm 65 v reverse voltage v r 60 v forward current i f 100 ma power dissipation p d 150 mw junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 param eter sym bol test condition min typ max unit reverse current i r v r =60v 0.1 a reverse voltage v f i f =10ma 1.0 v capacitance c v r =1v,f=1mhz 0.5 pf forward resistance r f i f =10ma,f=100mhz 2.0 marking marking p2


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